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| PRELIMINARY SFF120-28Q SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: * Rugged construction with poly silicon gate * Low RDS (on) and high transconductance * Excellent high temperature stability * Very fast switching speed * Fast recovery and superior dv/dt performance * Increased reverse energy capability * Low input and transfer capacitance for easy paralleling * Hermetically sealed surface mount package * TX, TXV and Space Level screening available * Replaces 4x IRF120 Types in One Package MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case (All Four) Total Device Dissipation @ TC = 25oC @ TC = 70oC SYMBOL VDS VGS ID Top & Tstg R 2JC PD 9.2 AMPS 100 VOLTS 0.35S QUAD N-CHANNEL POWER MOSFET 28 PIN CLCC VALUE 100 20 9.2 -55 to +150 10 12.5 9.5 UNIT Volts Volts Amps o C o C/W Watts PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: MOSFET 1 DRAIN: GATE: SOURCE: MOSFET 2 DRAIN: GATE: SOURCE: MOSFET 3 DRAIN: GATE: SOURCE: MOSFET 4 DRAIN: GATE: SOURCE: (3 PLACES) 5, 6, 7 1 2, 3, 4 9, 10, 11 8 12, 13, 14 19, 20, 21 15 16, 17, 18 23, 24, 25 22 26, 27, 28 NOTE: All drain/source pins must be connected on the PC board in order to maximize current carrying capability and to minimize RDS (on) NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00225B PRELIMINARY SFF120-28Q SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) RATING Drain to Source Breakdown Voltage (VGS =0 V, ID =250:A) Drain to Source ON State Resistance (VGS = 10 V, 60% of Rated ID) ON State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10 V) Gate Threshold Voltage (VDS =VGS, ID =250:A) Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS =60% rated ID) Zero Gate Voltage Drain Current (VDS = max rated Voltage, VGS = 0V) (VDS = 80% rated VDS, VGS = 0V, TA = 125oC) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off DELAY Time Fall Time Diode Forvard Voltage (IS = rated ID, VGS = 0V, TJ = 25oC) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance At rated VGS VGS = 10 V 80% rated VDS 60% rated ID VDD =50% rated VDS 50% rated ID RG = 18 S SYMBOL MIN TYP MAX UNIT BVDSS RDS(on) ID(on) VGS(th) gfs IDSS 100 9.2 2.0 2.7 55 0.25 - - 0.35 4.0 25 250 +100 -100 16 4.4 7.7 20 45 29 30 2.5 260 1.3 - V S A V 4.1 10.7 2.9 5.1 13 30 19 20 140 0.65 350 130 36 S(E) :A nA IGSS Qg Qgs Qgd td (on) tr td (off) tf VSD nC nsec V nsec :C pF TJ =25 C IF = rated ID di/dt = 100A/:sec VGS =0 Volts VDS =25 Volts f =1 MHz o trr QRR Ciss Coss Crss For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. NOTES: |
Price & Availability of SFF120-28Q
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